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HANBit
Synchronous DRAM Module 256Mbyte
HSD32M64B8A
(32Mx64Bit), SO-DIMM,
4Banks, 8K Ref., 3.3V
Part No. HSD32M64B8A
GENERAL DESCRIPTION
The HSD32M64B8A is a 32M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The HSD32M64B8A is a SO-DIMM(Small Outline Dual in line Memory Module) and is intended for mounting into 144-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications All module components may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.
FEATURES
* Part Identification HSD32M64B8A-F/10L : 100MHz (CL=3) HSD32M64B8A-F/10 : 100MHz (CL=2) HSD32M64B8A-F/12 : 125MHz (CL=3) HSD32M64B8A-F/13 : 133MHz (CL=3) F means Auto & Self refresh with Low-Power (3.3V) * Burst mode operation * Auto & self refresh capability (8192 Cycles/64ms) * LVTTL compatible inputs and outputs * Single 3.3V 0.3V power supply * MRS cycle with address key programs - Latency (Access from column address) - Burst length (1, 2, 4, 8 & Full page) - Data scramble (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock * The used device is 8M x 8bit x 4Banks Synchronous DRAM
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PIN ASSIGNMENT
PIN 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 Symbol Vss DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 Vss DQM0 DQM1 VDD A0 A1 A2 Vss DQ8 DQ9 DQ10 DQ11 VDD DQ12 PIN 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Symbol Vss DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 Vss DQM4 DQM5 VDD A3 A4 A5 Vss DQ40 DQ41 DQ42 DQ43 VDD DQ44 PIN 49 51 53 55 57 59 61 63 65 67 69 71 73 75 77 79 81 83 85 87 89 91 93 95 Symbol DQ13 DQ14 DQ15 Vss NC NC CLK0 VDD /RAS /WE /CS0 NC NC Vss NC NC VDD DQ16 DQ17 DQ18 DQ19 Vss DQ20 DQ21 PIN 50 52 54 56 58 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 Symbol DQ45 DQ46 DQ47 Vss NC NC CKE0 VDD /CAS NC A12 NC CLK1 Vss NC NC VDD DQ48 DQ49 DQ50 DQ51 Vss DQ52 DQ53 PIN 97 99 101 103 105 107 109 111 113 115 117 119 121 123 125 127 129 131 133 135 137 139 141 143
HSD32M64B8A
Symbol DQ22 DQ23 VDD A6 A8 Vss A9 A10_AP VDD DQM2 DQM3 Vss DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 Vss **SDA VDD
PIN 98 100 102 104 106 108 110 112 114 116 118 120 122 124 126 128 130 132 134 136 138 140 142 144
Symbol DQ54 DQ55 VDD A7 BA0 Vss BA1 A11 VDD DQM6 DQM7 Vss DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 Vss **SCL VDD
** These pins should be NC in the system which does not support SPD
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FUNCTIONAL BLOCK DIAGRAM
DQ0-63
HSD32M64B8A
CKE0 /CAS /RAS /CS0
CKE CAS RAS CE CKE CAS RAS CE CKE CAS RAS CE WE WE WE
U1
A0-A12
CLK DQ8-15 DQM1 BA0-1 CLK DQ8-15 DQM1
CLKA DQM0
U2
DQM1
A0-A12
BA0-1 CLK DQ16-23 DQM2
U3
CLKB DQM2
A0-A12
BA0-1
CKE CAS RAS CE WE
U4
CLK DQ24-31 DQM3
DQM3
A0-A12
BA0-1
CKE CAS RAS CE CKE CAS RAS CE CKE CAS RAS CE WE WE WE
U5
CLK DQ32-39 DQM4
CLKC DQM4
A0-A12
BA0-1 CLK DQ40-47 DQM5
U6
DQM5
A0-A12
BA0-1 CLK DQ48-55 DQM6
U7
CLKD DQM6
A0-A12
BA0-1
CKE CAS RAS CE WE
U8
CLK DQ56-63 DQM7
DQM7
A0-A12
BA0-1
/WE A0 - A12 BA0-1 CLKA
Vcc Vss
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Two 0.1uF Capacitors per each SDRAM
CLKB CLKC CLKD
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PIN FUNCTION DESCRIPTION
Pin CLK /CS Name System clock Chip enable Input Function
HSD32M64B8A
Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A12
Address
Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA12, Column address : CA0 ~ CA9
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time.
/RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge.
/CAS
Column strobe
address
Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. Enables write operation and row precharge. Latches data in starting from CAS, WE active.
/WE
Write enable
DQM0 ~ 7
Data mask
input/output
Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when DQM active. (Byte masking) Data inputs/outputs are multiplexed on the same pins. Power and ground for the input buffers and the core logic.
DQ0 ~ 63 Vcc/Vss
Data input/output Power supply/ground
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature
SYMBOL VIN ,OUT Vcc PD TSTG
RATING -1V to 4.6V -1V to 4.6V 8W -55oC to 150oC
Short Circuit Output Current IOS 400mA Notes: Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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HSD32M64B8A
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 C) ) PARAMETER Supply Voltage Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage SYMBOL Vcc VIH VIL VOH VOL MIN 3.0 2.0 -0.3 2.4 TYP. 3.3 3.0 0 MAX 3.6 Vcc+0.3 0.8 0.4 UNIT V V V V V 1 2 IOH = -2mA IOL = 2mA 3 NOTE
Input leakage current I LI -10 10 uA Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is 3ns. 3. Any input 0V VIN VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
(VCC = 3.3V, TA = 23 C, f = 1MHz, VREF =1.4V 200 mV) DESCRIPTION Clock Address /RAS, /CAS, /WE, /CS, CKE, DQM DQ (DQ0 ~ DQ15) SYMBOL CCLK CADD C IN COUT MIN 2.5 2.5 2.5 4.0 MAX 4.0 5.0 5.0 6.5 UNITS pF pF pF pF
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70 C) TEST PARAMETER SYMBOL CONDITION Burst length = 1 Operating current (One bank active) ICC1 tRC tRC(min) IO = 0mA ICC2P CKE VIL(max) tCC=10ns CKE & CLK VIL(max) tCC= CKE VIH(min) Precharge standby current in non power-down mode ICC2N CS* VIH(min), tCC=10ns 128 mA 16 mA 16 mA 960 960 880 880 mA 1 -13 -12 -10 -10L VERSION UNIT NOTE
Precharge standby current in power-down mode
ICC2PS
Input signals are changed one time during 20ns
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CKE VIH(min) ICC2NS CLK VIL(max), tCC= 112
HSD32M64B8A
Input signals are stable Active standby current in power-down mode ICC3P ICC3PS CKE VIL(max), tCC=10ns CKE&CLK VIL(max) tCC= CKEVIH(min), ICC3N CS*VIH(min), tCC=10ns 240 mA 48 mA 48
Active standby current in non power-down mode (One bank active)
Input signals are changed one time during 20ns CKEVIH(min)
ICC3NS
CLK VIL(max),
tCC=
200
Input signals are stable IO = 0 mA Operating current (Burst mode) ICC4 Page burst 1120 4Banks Activated tCCD = 2CLKs Refresh current Self refresh current ICC5 ICC6 tRC tRC(min) CKE 0.2V 1680 1680 40 16 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). 1600 1600 mA mA mA 2 1120 920 920 mA 1
AC OPERATING TEST CONDITIONS
(vcc = 3.3V 0.3V, TA = 0 to 70 C) PARAMETER AC Input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.4/0.4 1.4 tr/tf = 1/1 1.4 See Fig. 2 UNIT V V ns V
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HSD32M64B8A
+3.3V
Vtt=1.4V
1200 DOUT 870 50pF* VOH (DC) = 2.4V, IOH = -2mA VOL (DC) = 0.4V, IOL = 2mA
(Fig. 1) DC output load circuit
50 DOUT Z0=50 50pF
(Fig. 2) AC output load circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted) VERSION PARAMETER Row active to row active delay RAS to CAS delay Row precharge time Row active time SYMBOL -13 tRRD(min) tRP(min) tRP(min) tRAS(min) tRAS(max)
tRC(min)
UNIT -12 16 20 20 48 100 65 68 2 2 CLK + 20 ns 1 1 1 2 ea 70 70 -10 20 20 20 50 -10L 20 20 20 50 ns ns ns ns ns ns CLK CLK CLK CLK 15 20 20 45
NOTE 1 1 1 1
Row cycle time Last data in to row precharge Last data in to Active delay Last data in to new col. address delay Last data in to burst stop Col. address to col. address delay Number of valid output data
1 2.5 5 2 2 3 4
tRDL(min) tDAL(min) tCDL(min) tBDL(min) tCCD(min) CAS latency=3 CAS latency=2 -
1
Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For -8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported . (Recommand : tRDL=2CLK and tDAL=2CLK & 20ns.)
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AC CHARACTERISTICS
(AC operating conditions unless otherwise noted) -13 PARAMETER CLK cycle time CAS 7.5 latency=3 tCC CAS latency=2 CLK to valid output delay CAS 5.4 latency=3 tSAC CAS latency=2 Output data hold time CAS 2.7 latency=3 tOH CAS latency=2 CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z CLK to output in Hi-Z CAS 5.4 latency=3 tSHZ CAS latency=2 6 6 6 tCH tCL tSS tSH tSLZ 2.5 2.5 1.5 0.8 1 3 3 2 1 1 3 3 2 1 1 3 3 3 6 6 6 10 1000 1000 1000 8 10 SYMBOL MIN MAX MIN MAX MIN MAX -12 -10
HSD32M64B8A
-10L UNIT MIN 10 1000 12 ns 1 MAX NOTE
6 ns 7 1,2
3 ns 3 3 3 2 1 1 6 ns ns ns ns ns ns 3 3 3 3 3 2 2
7
ns
Notes : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to the parameter.
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HSD32M64B8A
SIMPLIFIED TRUTH TABLE
COMMAND Register Mode register set Auto refresh Refresh Self refresh Entry Exit CK E n-1 H H L H CKE n X H L H X /C S L L L H L /R A S L L H X L /C A S L L H X H /W E L H H X H D Q M X X X X V BA 0,1 A10/ AP OP code X X Row address L H X L H L H X V H Column Address (A0 ~ A9) Column L H precharge H Bank selection All banks Entry Exit Entry Exit H H L H L H H X H L X X L H L H L L H L X H L H L L L X V X X H X V X X H X H X H H H X V X X H X V L L X V X X H X V X X X X X X X V X X X 7 V X L H X X L H L L X V H X X Address (A0 ~ A9) 4,5 6 4 4,5 4 A11,A12, A9~A0 NOTE 1,2 3 3 3 3
Bank active & row addr. Read & column address Auto disable Auto disable Auto disable Auto disable Burst Stop Precharge precharge precharge precharge
Write & column address
Clock suspend or active power down
Precharge down mode DQM
power
No operation command
(V=Valid, X=Don't care, H=Logic high, L=Logic low) Notes : 1. OP Code : Operand code A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected. If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)
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TIMING DIAGRAMS
Please refer to attached timing diagram chart (II)
HSD32M64B8A
PACKAGING INFORMATION
Unit : Inch [mm]
PCB Thickness: 1.0mm (10.0t - 1.1t) Immersion Gold PCB Pattern
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ORDERING INFORMATION
HSD32M64B8A
Part Number
Density
Org.
Package
Ref.
Vcc
Bank
MAX.frq CL3 133MHz CL3 125MHz CL3 100MHz CL2 100MHz CL3 133MHz CL3 125MHz CL3 100MHz CL2 100MHz
HSD32M64B8A-13 HSD32M64B8A-12 HSD32M64B8A-10L HSD32M64B8A-10 HSD32M64B8A-F13 HSD32M64B8A-F12 HSD32M64B8A-F10L HSD32M64B8A-F10
256MByte 256MByte 256MByte 256MByte 256MByte 256MByte 256MByte 256MByte
32M x 64 32M x 64 32M x 64 32M x 64 32M x 64 32M x 64 32M x 64 32M x 64
144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM 144 Pin-SODIMM
8K 8K 8K 8K 8K 8K 8K 8K
3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V
4Bank 4Bank 4Bank 4Bank 4Bank 4Bank 4Bank 4Bank
F means Auto & Self refresh with Low-Power (3.3V)
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